mbr(f,b)1090 & mbr(f,b)10100 vishay general semiconductor document number: 89034 revision: 27-aug-07 www.vishay.com 1 high-voltage schottky rectifier features ? trench mos schottky technology ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? meets msl level 1, per j-std-020c, lf max peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 seconds (for to-220ac and ito-220ac package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency re ctifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application. mechanical data case: to-220ac, ito-220ac, to-263ab epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 10 a v rrm 90 v, 100 v i fsm 150 a v f 0.65 v t j max. 150 c case pin 2 pin 1 mbr1090 mbr10100 mbrb1090 mbrb10100 pin 1 pin 2 k heatsink 1 2 1 2 k 1 2 mbrf1090 mbrf10100 pin 2 pin 1 to-263ab to-220ac ito-220ac tmbs ? maximum ratings (t c = 25 c unless otherwise noted) parameter symbol mbr1090 mbr10100 unit maximum repetitive peak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current at t c = 133 c i f(av) 10 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a peak repetitive reverse current at t p = 2 s, 1 khz i rrm 0.5 a voltage rate of change (rated v r ) dv/dt 10000 v/s operating junction and storage temperature range t j , t stg - 65 to + 150 c isolation voltage (ito-220ac only) from terminal to heatsink t = 1 minute v ac 1500 v
mbr(f,b)1090 & mbr(f,b)10100 vishay general semiconductor www.vishay.com document number: 89034 revision: 27-aug-07 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage (1) i f = 10 a, i f = 10 a, i f = 20 a, t c = 25 c t c = 125 c t c = 125 c v f 0.80 0.65 0.75 v maximum reverse current at working peak reverse voltage (1) t j = 25 c t j = 100 c i r 100 6.0 a ma thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol mbr mbrf mbrb unit typical thermal resistance r ja r jc 60 2.0 - 3.5 60 2.0 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ac mbr10100-e3/4w 1.845 4w 50/tube tube ito-220ac mbrf10100-e3/4w 1.661 4w 50/tube tube to-263ab mbrb10100-e3/4w 1.384 4w 50/tube tube to-263ab mbrb10100-e3/8w 1.384 8w 800/reel tape reel figure 1. forward current derating curve 0 2 4 6 10 0 50 100 150 8 a v erage for w ard c u rrent (a) case temperat u re (c) resisti v e or ind u cti v e load figure 2. maximum non-repetitive peak forward surge current 40 60 100 8 0 140 120 160 1 100 10 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
mbr(f,b)1090 & mbr(f,b)10100 vishay general semiconductor document number: 89034 revision: 27-aug-07 www.vishay.com 3 figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics figure 5. typical junction capacitance 0 0.2 0.1 0.5 1.0 0.4 0.3 1 100 10 0.01 0.1 0.6 0.7 0. 8 0.9 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) 20 10 100 40 60 8 0 1.0 10 0.01 0.1 100 0.001 30 50 70 90 t j = 150 c t j = 125 c t j = 25 c 1 10 100 1000 10000 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1 mhz v sg = 50 m v p-p figure 6. typical transient thermal impedance figure 7. typical transient thermal impedance 0.01 10 1 100 10 100 0.1 0.1 1 t - p u lse d u ration (s) transient thermal impedance (c/ w ) j u nction to case mbr(b) 0.1 10 1 100 1 10 0.001 0.1 t - p u lse d u ration (s) transient thermal impedance (c/ w ) j u nction to case mbrf 0.01
mbr(f,b)1090 & mbr(f,b)10100 vishay general semiconductor www.vishay.com document number: 89034 revision: 27-aug-07 4 package outline dimensions in inches (millimeters) 0.154 (3.91) 0.14 8 (3.74) dia. 0.113 (2. 8 7) 0.103 (2.62) 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.160 (4.06) 0.140 (3.56) 0.037 (0.94) 0.027 (0.6 8 ) 0.205 (5.20) 0.195 (4.95) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 12 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.105 (2.67) 0.095 (2.41) 0.635 (16.13) 0.625 (15. 8 7) 0.603 (15.32) 0.573 (14.55) pi n 0.415 (10.54)max. 0.370 (9.40) 0.360 (9.14) 0.057 (1.45) 0.045 (1.14) case pi n 2 pi n 1 to-220ac 0.404 (10.26) 0.3 8 4 (9.75) 0.076 ref. (1.93) ref. 45 ref. 0.600 (15.24) 0.5 8 0 (14.73) pi n 1 2 0.560 (14.22) 0.530 (13.46) 0.025 (0.64) 0.015 (0.3 8 ) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.076 ref. (1.93) ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 7 ref. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.190 (4. 8 3) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 7 ref. 0.110 (2.79) 0.100 (2.54) 0.02 8 (0.71) 0.020 (0.51) ito-220ac 0.3 8 0 (9.65) 0.41 1 (10.45) 0.320 ( 8 .13) 0.360 (9.14) 0.591(15.00) 0.624 (15. 8 5) 1 2 0.245 (6.22) mi n k k 0.160 (4.06) 0.190 (4. 8 3) 0.045 (1.14) 0.055 (1.40) 0.014 (0.36) 0.021 (0.53) 0.110 (2.79) 0.140 (3.56) 0.110 (2.79) 0.090 (2.29) 0.047 (1.19) 0.055 (1.40) 0-0.01 (0-0.254) 0.027 (0.6 8 6) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) to-263ab 0.105 (2.67) 0.0 8 (0.095) (2.41) (2.032) 0.42 (10.66) 0.670 (17.02) 0.591 (15.00) 0.15 (3. 8 1) 0.33 ( 8 .3 8 ) mountin g pad layout mi n . mi n . mi n . mi n .
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